4-inch wafers have become core substrates for LED epitaxy, GaN power devices and other fields due to their high temperature resistance, high hardness (Mohs hardness 9), excellent optical transmittance and chemical stability. Their surface processing quality directly determines the stability of subsequent processes and device performance. As the core equipment for precision machining of 4-inch wafers, the Sapphire Flat Polishing Machine must achieve nanometer-level precision control in response to the hard and brittle characteristics of sapphire, making it key equipment for ensuring its industrial mass production.

Industry standards impose stringent requirements on 4-inch wafer polishing, demanding a surface roughness Ra ≤ 0.1 nm, flatness deviation ≤ 0.5 μm, and freedom from scratches and residues. The Sapphire Flat Polishing Machine adopts the Chemical Mechanical Polishing (CMP) process. Through the synergistic effect of mechanical grinding and chemical corrosion, it avoids defects such as edge chipping and cracks, and is suitable for batch processing of 4-inch wafers.

During processing, the equipment adopts closed-loop control of pressure in multiple zones to accurately distribute polishing pressure and prevent wafer warpage and thickness deviation. Equipped with special polishing slurry and polishing pads, it suppresses abrasive agglomeration, reduces surface defects such as scratches and pits, ensures wafer surface cleanliness, and meets the requirements of subsequent epitaxial growth.

At present, this equipment has realized large-scale processing of 4-inch wafers with integrated online detection and parameter adjustment modules. It can stably maintain processing accuracy, reduce consumable loss and rework costs, providing reliable support for 4-inch wafer processing in LED, power device and other fields, and promoting the high-quality development of related industries.