The thinning and high-precision processing of aluminum nitride ceramic substrates are critical procedures to ensure the heat dissipation efficiency and packaging reliability of semiconductor power devices. As a high-thermal-conductivity, hard and brittle ceramic material, aluminum nitride features an extremely low processing tolerance. Conventional single-side lapping processes suffer from unbalanced stress and large positioning errors caused by multiple clamping operations. The processed ultra-thin substrates are prone to warpage, uneven thickness and surface micro-cracks, which directly affect the thermal conduction uniformity and service life of devices. The
Aluminum Nitride (AlN) Double-Side Lapping Machine adopts targeted structural and process optimization to specifically solve the precision and yield bottlenecks in the precision finishing of AlN substrates.
Adopting a dual-direction synchronous counter-lapping structure with upper and lower grinding discs, the machine subverts the traditional segmented single-side processing mode and completes synchronous double-side grinding and flattening of substrates in a single operation. During processing, workpieces bear uniform and symmetrical stress on both sides without manual flipping or secondary clamping calibration. It fundamentally eliminates common defects such as stress accumulation, plate deformation and excessive thickness deviation, and accurately guarantees core precision indicators including substrate flatness and parallelism.
Equipped with a high-precision planetary transmission system and an intelligent closed-loop pressure regulation module, the machine supports refined parameter adjustment and matches exclusive grinding solutions for AlN substrates of different sizes and thicknesses. Adopting a low-stress micro-layer material removal process and abandoning extensive cutting methods, it effectively removes sintering residual layers and surface defects while completely protecting the ceramic lattice structure, avoiding process defects such as edge chipping and micro-damage, and meeting the precision processing requirements of multi-size AlN substrates.
Substrates processed by the machine feature uniform thickness, stress-free flat surfaces, and retain the original high thermal conductivity and high insulation performance without processing loss, fully complying with the stringent process requirements of subsequent coating, bonding and precision packaging. Flexible for both sample trial production and mass production, the machine delivers stable processing precision and excellent batch consistency. It effectively solves the industrial pain points of difficult processing and low yield of ultra-thin AlN ceramic substrates, providing an efficient and reliable process solution for the precision processing of semiconductor heat dissipation substrates.
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