Small Wafer Grinderis designed for R&D trial production and small-batch fine polishing of standard 6–12 inch wafers. Relying on a high-rigidity machine frame and precision planetary grinding motion system, it creates a uniformly distributed grinding condition across the whole wafer, solving key process challenges commonly encountered in wafer grinding such as in-wafer thickness variation, edge chipping and planar distortion. Equipped with a high-precision 3D closed-loop control system for pressure, rotation speed and processing duration, the machine enables constant micro-scale material removal at the micron level. It is suitable for thinning and planarization processing of semiconductor substrates including silicon wafers, silicon carbide, sapphire and quartz. By dynamically balancing the rotating plate accuracy, it effectively offsets stress concentration and thermal deformation during wafer processing, tightly controls the global flatness, parallelism and total thickness variation of wafers, and greatly reduces surface grinding damage and residual stress. Compared with mass-production large wafer grinding equipment, this machine features a wider parameter adjustment range and stronger process adaptability. It can flexibly switch among rough grinding, fine grinding and ultra-fine grinding processes, and supports rapid iterative verification of grinding consumables and process formulas. The machine is compatible with single small sample trial fabrication and small-batch wafer processing, with low trial-and-error cost and high process reproducibility, enabling fast output of stable and reliable process data. Wafers after processing have excellent surface flatness without obvious microcracks or scratches. The substrate condition fully meets the requirements of subsequent precision processes such as photolithography, coating and bonding. It is widely used for 6–12 inch wafer process development and sample preparation in semiconductor research institutes, university laboratories and enterprise R&D centers.