The Double Side Lapping Machine adopts a planetary transmission structure. The carrier drives wafers to generate compound motion between the upper and lower lapping plates. With flexible segmented pressure loading, it avoids concentrated point pressure and reduces residual stress inside wafers. The uniform material removal mode balances the force on both sides of wafers and reduces post-processing warpage. Equipped with a servo pressure adjustment module and real-time thickness detection unit, the machine dynamically adjusts pressure, lapping plate speed and processing time according to real-time wafer thickness feedback to prevent local over-lapping. Lapping plates with high flatness ensure consistent removal rate across the whole wafer and reduce deformation caused by uneven removal. It is suitable for 6–12 inch monocrystalline silicon, silicon carbide and other semiconductor wafers, supporting segmented rough lapping and fine lapping processes. The integrated vibration damping structure suppresses lapping vibration and further reduces sub-surface damage. This process effectively improves wafer warpage, lowers the risk of chipping in subsequent processes and meets the strict requirements on wafer geometric accuracy for semiconductor device manufacturing.